Department of Engineering Physics
1280 Main Street West, Hamilton
Ontario, Canada L8S 4L7
voice: (905) 525-9140 x 27224
fax: (905) 528-5406
B.Sc. (DeMontfort), Ph.D. (Univ. of East Anglia)
3A03 Applications of Photonics
4Z03/6Z03 Semiconductor Manufacturing Technology
4U04 Solid State Laboratory
For information on Silicon Photonics click here.
Since the invention of the bipolar transistor in 1947, the growth
of the semiconductor industry has been a catalogue of continuous
success. Researchers have been able to maintain pace with the demand
for exponential growth in both capacity and complexity, primarily
through the shrinkage of device dimension. However, the next few
decades will witness a series of major challenges for both device
and process engineers if this trend is to continue.
Utilizing the excellent facilities in Engineering Physics housed
in the CEMD, we intend to explore novel device systems and investigate
the microscopic phenomena which limit current processing strategies.
Much of the work will concentrate on silicon as the industry workhorse
material. In particular, we are interested in the interaction of
light with silicon (exploiting the high bandwidth of optical devices)
and intend to develop chips which combine optical and electrical
functionality. This is somewhat challenging (silicon is not a natural
material for use in optoelectronics) but necessary because silicon
provides the most cost-effective route for integrated optical solutions.
The ambitious goal of such research is the monolithic integration
of functions such as switching, modulation, (de)multiplexing, emission,
amplification and detection, together with control electronics
and environmental sensing, using (sub)micron optical waveguides
on a single silicon chip.
The fabrication of devices will be via technologies fully compatible with standard
silicon processing, including photolithography, layer deposition, ion implantation
and wet and dry etching capitalizing on links with industrial and academic
I have over 70 refereed publications in international research
journals, 5 active patents, and I am the co-author of the first
text to deal specifically with silicon photonics. A selection of
these publications is listed below:-
G T Reed and A P Knights, Silicon Photonics- An Introduction,
Wiley (2004), ISBN: 0-470-87034-6.
A P Knights, A P Vonsovici, D Brady, A A House, G F Hopper, An
In-line light sensor, Patent number WO03060599 (2003).
A P Knights and G F Hopper, Effect of ion implantation induced
defects on optical attenuation in silicon waveguides, Electronics
Letters, 39, 1648 (2003).
P. G. Coleman, C. P. Burrows, and A. P. Knights, Simple expression
for vacancy concentration at half ion range following MeV implantation
of Si, Appl. Phys. Lett., 80, 947 (2002).
C. M. Johnson, N. G. Wright, M. J. Uren, K. P. Hilton, M. Rahimo,
D. A. Hinchley, A. P. Knights, D. J. Morrison, A. B. Horsfall,
S. Ortolland, and A. G. O'Neill, Recent progress and current issues
in SiC semiconductor devices for power applications, IEE Proc.
-Circuits Devices Syst., 148, 101 (2001).
T. Sukova, A. Pantane, L. Eaves, P. C. Main, M. Henini, A. Polimeni,
A. P. Knights and C. Jeynes, Indium interdiffusion in annealed
and implanted InAs/AlGaAs self-assembled quantum dots, J. Appl.
Phys., 89, 6044 (2001).
R. J. Curry, W. P. Gillin, A. P. Knights, and R. M. Gwilliam,
Silicon-based organic light emitting diode operating at a wavelength
of 1.5um, Appl. Phys. Lett., 77, 2271(2000).
A. P. Knights, M. A. Lourenço, K. P. Homewood, D. J. Morrison,
N. G. Wright, S. Ortolland, C. M. Johnson, A. G. O'Neill, P. G.
Coleman, K. P. Hilton, and M. J. Uren, Low temperature annealing
of 4H-SiC Schottky diode edge terminations formed by 30keV Ar+
implantation, J. Appl. Phys., 87, (2000), 3973.
P. J. Hughes, A. P. Knights, B. L. Weiss, and S. Ojha, Optical
characteristics of photosensitive Ge-doped SiO2 planar waveguides
implanted with protons at 800oC, Electronics Letters, 36, 427 (2000).
A. P. Knights and M. J. Kelly, Laterally stacked varactor formed
by ion implantation, Electronics Letters, 35 ,846 (1999).
A. P. Knights, R. M. Gwilliam, and P. G. Coleman, Ion implantation
dosimetry method and apparatus, UK patent no.9818330.4 (1998).