Term l - 2011/2012

Instructor:
Dr. Peter Mascher, ETB-111, ex. 24963

Part A: LECTURES

General Solid State Physics	- Binding and Structure
The Perfect Lattice	- Reciprocal Lattices - Free and Nearly Free Electrons - Energy Bands
Semiconductors	- Methods of Band Structure Calculations - Experimental Confirmation - Intrinsic and Extrinsic Semiconductors
Defect Engineering	- Doping and Impurities - Electronic Configuration - Energy Levels (Shallow and Deep States) - Lattice Relaxations - Metastabilities

Part B: PRESENTATIONS

A sample list of topics is shown below. The presentations should be 20 minutes in length. After each presentation there will be a question and answer session. All students in the class are expected to participate and marks are given for participation in this session; i.e., for the answers given and the quality of the questions asked.

A written report of not more than 10 pages in length is due no later than two days before the presentation. The presentation and the report together count 60% toward the final mark, according to the evaluation scheme shown below.

Examples of Presentations from Previous Years

1. Graphene: A Zero-bandgap Semiconductor for Novel Devices

2. Photonic Crystal LEDs – Recent Developments and Applications

3. The Role of Defects and Diffusion in Silicon Technology

4. Materials Challenges in the Development of Green LEDs

5. Photonic Applications of Rare-Earth Doped Semiconductors

6. Moore’s Law and its Impact on Materials Development

7. Solar Cells Based on Quantum Dots

8. Magnetic Semiconductors – Moving Beyond GaMnAs

9. The Effect of Strain on the Band Structure of Compound Semiconductors

10. Recent Developments and Applications of SiC Technology

Part C: EXAMINATION

An oral examination of approximately 45 minutes duration counts for the remaining 40% of the final mark. Topics include but are not limited to the material discussed in Part A and general matters arising from the presentations.

 

DETAILED EVALUATION SCHEME

PRESENTATION

Presentation	15
Answers to Questions	10
Participation	5
Total	30

 

REPORT

Contents	20
Presentation	10
Total	30

 

ORAL EXAMINATION

Total

40

 

TEXTBOOKS AND LITERATURE

There is no single textbook upon which the course material is based. A courseware package containing copies of important figures, tables and references is available at the McMaster Bookstore.

 

EP 782 - FREQUENTLY USED TEXTS AND HANDBOOKS

A) GENERAL SOLID STATE AND MATERIALS PHYSICS

J.S. Blakemore, SOLID STATE PHYSICS, 2nd Ed., Cambridge University Press 1985
QC 176 .B63 1985

Ch. Kittel, INTRODUCTION TO SOLID STATE PHYSICS, 8th Ed., John Wiley 2005
QC 176 .K5 2005

H. Ibach and H. Lüth, SOLID-STATE PHYSICS: AN INTRODUCTION TO PRINCIPLES OF MATERIALS SCIENCE, Springer Verlag 1995
QC 176 .I2313 1995

S.O. Kasap, PRINCIPLES OF ELECTRICAL ENGINEERING MATERIALS AND DEVICES, McGraw-Hill 1997

A.P. Sutton, ELECTRONIC STRUCTURE OF MATERIALS, Oxford Science Publications 1994
QC 176.8 .E4 S875 1993

J.P. Schaffer, A. Saxena, S.D. Antolovich, T. H. Sanders, and S.B. Warner, THE SCIENCE AND DESIGN OF ENGINEERING MATERIALS, McGraw-Hill 1999

M. Razeghi, FUNDAMENTALS OF SOLID STATE ENGINEERING, 2nd Ed., Springer Verlag 2006
TK 7816 .R39 2002 (1st edition)

S. Kasap and P. Capper (Eds.), SPRINGER HANDBOOK OF ELECTRONIC AND PHOTONIC MATERIALS, Springer Verlag 2006
TK 7871 .S65 2006

B) SEMICONDUCTORS

J.C. Phillips, BONDS AND BANDS IN SEMICONDUCTORS, Academic Press 1973
QC 611 .P58 1973

C.M. Wolfe, N. Holonyak, and G.E. Stillman, PHYSICAL PROPERTIES OF SEMICONDUCTORS, Prentice Hall 1989
QC 611 .W74 1989

M.L. Cohen and J.R. Chelikowsky, ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF SEMICONDUCTORS, 2nd Ed., Springer Verlag 1989
QC 611 .O6 C63 1989

V. Swaminathan and A.T. Macrander, MATERIALS ASPECTS OF GaAs and InP BASED STRUCTURES, Prentice Hall 1991
TK 7871.85 .S937 1991

O. Madelung (Ed.), SEMICONDUCTORS - GROUP IV ELEMENTS AND III-V COMPOUNDS, Springer Verlag 1991
QC 611.45 .S46 1991

O. Madelung (Ed.), SEMICONDUCTORS – OTHER THAN GROUP IV ELEMENTS AND III-V COMPOUNDS, Springer Verlag 1992
QC 611.45 .S462S37 1992

O. Madelung, SEMICONDUCTORS: DATA HANDBOOK, 3rd Ed., Springer Verlag 2004
QC 611.45 .S46 2004

E.F. Schubert, DOPING IN III-V SEMICONDUCTORS, Cambridge University Press 1993
QC 611.8 .C64 S34 1993

Peter Y. Yu and M. Cardona, FUNDAMENTALS OF SEMICONDUCTORS, 3rd Edition, Springer Verlag 2001

S. Mahajan and K.S. Sree Harsha, PRINCIPLES OF GROWTH AND PROCESSING OF SEMICONDUCTORS, McGraw-Hill 1999

B.G. Streetman and S. Banerjee, SOLID STATE ELECTRONIC DEVICES, 5th Edition, Prentice-Hall 2000
TK 7871.85 .S77 2000

M.S. Tyagi, INTRODUCTION TO SEMICONDUCTOR MATERIALS AND DEVICES, John Wiley 1991

M. Levinshtein, S. Rumyantsev, and M. Shur (Eds.), HANDBOOK SERIES ON SEMICONDUCTOR PARAMETERS, Vols. 1 and 2, World Scientific 1996, 1999

T.S. Moss (Series Editor), HANDBOOK ON SEMICONDUCTORS, Vols. 1 – 4, North-Holland 1992
TK 7871.85.H336 (old edition)

D.A. Drabold and S.K. Estreicher (Eds.), THEORY OF DEFCTS IN SEMICONDUCTORS, Springer Verlag 2006